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| to ? 126 1. base 2. collector 3. emitter to-126 plastic-encapsulate transistors 3CA772 transistor (pnp) features z high current z low voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -30 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -6 v collector cut-off current i cbo v cb =-40v,i e =0 -1 a collector cut-off current i ceo v ce =-30v,i b =0 -10 a emitter cut-off current i ebo v eb =-6v,i c =0 -1 a dc current gain h fe v ce =-2v, i c =-1a 60 400 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.2a -0.5 v base-emitter saturation voltage v be(sat) i c =-2a,i b =-0.2a -1.5 v transition frequency f t v ce =-5v,i c =-0.1a, f=10mhz 50 mhz classification of h fe rank r o y gr range 60-120 100-200 160-320 200-400 symbol parameter value unit v cbo collector-base voltage -40 v v ceo collector-emitter voltage -30 v v ebo emitter-base voltage -6 v i c collector current -3 a p c collector power dissipation 1.25 w r ja thermal resistance from junction to ambient 100 / w t j junction temperature 150 t stg storage temperature -55~+150 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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